hole conduction
英 [həʊl kənˈdʌkʃn]
美 [hoʊl kənˈdʌkʃn]
空穴传导
双语例句
- Dopant-An element that contributes an electron or a hole to the conduction process, thus altering the conductivity.
搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。 - We now believe that these materials conduct by a process known as hole conduction.
现今我们知道，这些材料的导电过程是所谓空穴导电。 - Hole is an charged electronic entity in semiconductors and insulators which have energies less than the Fermi level and participate in the electric conduction. enrico fermi atomic power plant
空穴是半导体和绝缘体中的一种带电体，其能量小于费米能，并且参与导电。讹科费米原子能电站 - The results of ESR implied that there was stable radical group in the polymer to confirm that the polymer took hole hopping conduction mechanism.
ESR谱图表明在常温下空气中聚合物中存在有稳定的自由基，为空穴跳跃导电机理。 - The analysis of XPS reveals the possibility of oxyanion hole conduction.
XPS能谱及交流阻抗谱分析显示可能存在氧空穴导电。 - The pyroelectricity is measured to main carrying-gold mineral pyrite. the result re fleeted that the pyrite is hole conduction, and have calculated deposit to denude no much, belong to upper outcropping.
对其主要载金矿物黄铁矿的热电性测定，表明黄铁矿为空穴型导电，该矿床剥蚀程度不大，属上部出露。 - Secondly, the lowest and next lower energy levels of electron and hole in asymmetric coupled quantum well is analyzed and found that the six energy levels arise from the coupled ground states of the conduction and valence bands of the two different single quantum wells.
利用耦合模理论分析了非对称耦合量子阱中电子和空穴最低、次低能级，发现这些能级由非对称阱中的左右阱分别视作单阱时基态能级通过耦合而形成。 - A mathematical model of initial formation temperature was set up on the basis of the physical model of hole temperature at the moment of no drilling fluid circulation, and the solution of thermal conduction equation was acquired by Laplace transform;
文章首先在钻井液循环停止时井眼温度物理模型的基础上建立了数学模型，并用拉普拉斯变换法求得了热传导方程的解； - Then a set of vertical U-shaped buried tube GSHP simulation test-bed had been set up to simulate the heat transfer process in the drilling hole and the external soil with one dimensional heat conduction model and one dimensional Kelvin line source model, respectively.
其次，建立了一套垂直U形地埋管地源热泵模拟试验台，分别采用一维导热模型和一维Kelvin线热源模型模拟了钻孔内、外的传热过程。 - The hole mobilities obtained in this paper are quantitative, and hence can supply valuable references to the conduction channel design related to the stress and orientation in the Si based strained PMOS devices.
本文研究所得空穴迁移率数据量化，可为Si基应变PMOS器件及电路的研究与设计提供了理论参考。